Elcina

SBN10256 N-Channel Enhancement Mode Field Effect Transistor

Categories: Components

Sub Category: Semiconductor Devices

Material: Plastic

100V, 256A, TO-263 RDS(ON) typ = 1.8mW @VGS = 10VRDS(ON) typ = 2.0mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability.RoHS compliant. TO-263 package.

Product Specification:

Voltage(V): 100 V Drain Current-Continuous : 256 A Maximum Power Dissipation : 283 W Static Drain-Source On-Resistance : 2.2 mOhms Total Gate Charge : 155 nC Package :TO-263

About the Company:

Company Name

Sagar Semiconductors Private Limited

Category

Components

Sub Category

Semiconductor Devices

Activity

Not any of the mentioned options

Core Activity

Other

Location

Hyderabad

Company Details:


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